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| Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T RA N S I S T O R HS669A APPLICATIONS Low Frequancy Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 Tstg----Storage Temperature.............................. -55~150 Tj----Junction Temperature.................................... 150 PC----Collector DissipationTc=25........................ 20W PC----Collector DissipationTA=25........................ 1W VCBO ----Collector-Base Voltage.............................. 180V VCEO ----Collector-Emitter Voltage........................... 160V VEBO ----Emitter-Base Voltage.................................... 5V IC----Collector Current.............................................1.5A 1EmitterE 2CollectorC 3BaseB TO-126 ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current 180 160 5 10 60 30 1 1.5 140 14 200 V V V A IC= 1mA, IE=0 IC= 10mA, IB=0 IE= 1mA, IC=0 VCB=160V, IE=0 VCE= 5V, IC= 150mA VCE= 5V, IC= 500mA HFE1 DC Current Gain HFE2 DC Current Gain VCE(sat) VBE ft Cob Collector- Emitter Saturation Voltage Base-Emitter Voltage Current Gain-Bandwidth Product V V MHz pF IC= 500mA, IB= 50mA VCE=5V, IC=150mA VCE=5V, IC=150mA, VCB=10V, IE=0f=1MHz Output Capacitance hFE Classification B 60--120 C 100--200 |
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